International Journal of Advanced Studies in Computer Science and Engineering (IJASCSE)
ISSN : 2278 7917

All articles published in IJASCSE are open access and freely available online, immediately upon publication.

The main type of peer review used by IJASCSE is Double-blind.

ALL ACCEPTED papers will be reviewed for possible publication in ELSEVIER SSRN.

  Submission is now open: Till 10th of month.
;
Submit NOW!
Publications

International journal of advanced studies in Computer Science and Engineering (IJASCSE) maintains all published papers in Open Access Database which provides open access of all listed papers to universities, researchers and scholars. It is based on OAI-PMH protocols which help to index the research papers worldwide. All Issues published are dedicated to best practices on ethical matters, errors and retractions. The prevention of publication malpractice is one of the important responsibilities of the editorial board. Any kind of unethical behavior is not acceptable, and plagiarism is not tolerated in any form. Our ethic statements are based on Elsevier recommendations and COPE's Best Practice Guidelines for Journal Editors.

To know more about our publication ethics and malpractice statement, pls Click here.

IJASCSE Volume 11 Issue 12
Effect of Geometrical and Physical parameters of AlGaN/GaN HEMT on the electrical characteristics with AlN spacer layer
Author:
Abdelmalek Douara; Faculty of Science and Technology, Tissemsilt University, Algeria
Co-Authors (s) :
Abdelaziz Rabehi; Laboratoire de Micro-electronique Appliquee. Universite Djillali Liabes de Sidi Bel Abbes, Algeria. Mustapha Hamdani; Faculty of Science and Technology, Tissemsilt University, Algeria
Keywords:
Silvaco Atlas TCAD, AlxGa1−xN/GaN,δ-doped layer,HEMTs, AlN
e-Mail:
rab_ehi@hotmail.fr
Abstract::
The goal of this manuscript is to use the Silvaco Atlas TCAD simulator to investigate the effect of some parameters on the current-voltage characteristics of a high-electron-mobility transistors devices based on AlxGa1-xN/GaN, Advanced AlxGa1-xN/AlN/GaN heterostructures with GaN channel layer and AlN spacer layer. It is demonstrated that numerical simulation can be used effectively in the development of HEMTs. We looked into the effect of the GaN thickness layer on the current-voltage characteristics, as well as the effect of the δ -doped layer within AlxGa1-xN barrier layer, the effect of the spacer thickness is also considered. Among the sample structures we used for our com-putations, our calculations reveal a low threshold voltage value and the maximum transconductance. Our structure with GaN channel layer thickness of 200 nm, Al content of x = 0.2 with a δ -doped layer of n = 5 x 1018 cm-3, we find that the maximum saturation current.
Modeling of the AC Breakdown Voltage in Point/Plane Air Gaps with Insulating Plexiglas Barrier by using the Design of Experiments Method
Author:
Abdelghani ROUINI; Applied automation and industriel diagnostic Laboratory, ZianeAchour University of Djelfa, Algeria
Co-Authors :
Messaouda LARBI; Department of Computer Science, University of Djelfa, Algeria--Samira LARBI; Department of science and technology, University of Laghouat, Algeria
Keywords::
Breakdown voltage, point-plane gap, insulating barrier ,experiments design method, factors
e-Mail:
rouinia@yahoo.fr
Abstract::
The breakdown paths and conditions of air-insulated rod-plane gaps under alternating voltages were investigated for plexiglass barrier inserted at different gap positions.In the present paper methods of the Modeling of the AC breakdown voltage in Point/Plane Air Gaps with insulating Plexiglas barrier are investigated by using the design of experiments method, An analysis based on experiments design method has been developed with indicates that,measures to contain tests of relevant information in the early stages of the short-time investigation were carried out on a one-time basis with a barrier varying in position and size. The results of our work are carried out at the High Voltage Laboratory of BISKRA University in the field of dielectric strength of air in system peak-barrier.
Numerical simulation of tandem solar cells based-CIGS and C-Si sub-cells using SCAPS -1D
Author :
Amina Bouzidi; Department of Electronics, Faculty of Technology, University Mohamed Boudiaf, 28000, M’sila, Algeria.
Co-Authors: :
Idris Bouchama, Moufdi Hadjab; Department of Electronics, Faculty of Technology, University Mohamed Boudiaf, 28000, M’sila, Algeria; M. A. Saeed, Department of Physics, Division of Science & Technology, University of Education, Lahore, Pakistan
Keywords:
Tandem, SCAPS-1D, Buffer layer, Cu(In,Ga)Se2 material, c-Si
e-Mail:
amina.bouzidi@univ-msila.dz
Abstract::
Numerical simulation of single junction and tandem solar cells-based copper indium gallium diselenide Cu(In,Ga)Se2 and silicon (c-Si) electrical characteristics have been accomplished by Solar Cell Capacitance Simulator (SCAPS 1-D) tool. The layered structure consisting of CIGS as top cell with a buffer layer of zinc-based oxysulfide Zn(O,S) and the bottom cell of c-Si junction has been investigated. The top and bottom single cells have demonstrated the conversion efficiency as 11.63 and 13.16%, respectively. The tandem designs exhibited a conversion efficiency of 25.68% resulted from the enhanced open-circuit voltage (VOC) as 0.90 V and short-circuit current density (JSC) as 36.99 mA/cm2. The cells were illuminated via AM 1.5 to investigate the current densities and external quantum efficiency (EQE). The simulations were optimized by adjusting the CIGS concentration and the thickness of semiconducting layers. Moreover, the effect of variation in temperature on the device performance has been investigated.
Optimal attitude control of a satellite in real orbit using multiple fractional-order controllers
Author :
Bachir Nail; Mechanical engineering, materials, and structures laboratory, Faculty of Science and Technology, University of Tissemsilt, Algeria
Co-Authors: :
Belkacem Bekhiti-Institute of Aeronautics and Space Studies, Saad Dahlab University, Blida, Algeria; Mahedi Abdelghani- Faculty of Science and Technology, University of Djelfa, Algeria
Keywords:
Satellite system, Attitude control, PID Con- troller, Fractional-order, Harris Hawks Optimizer.
e-Mail:
bachir.nail@cuniv-tissemsilt.dz
Abstract::
The purpose of this work is to design three optimal fractional-order PIλ Dµ controllers for regulating the at- titude of a three-axis satellite. The parameter gains of the controllers are tuned with the innovative Har- ris Hawks Optimizer (HHO). The state-space dynamic model of the satellite system is obtained by linearizing the nonlinear model around the Local Horizontal Lo- cal Vertical (LHLV) orbital frame. This allows for the model to be solved in state space. A study in which con- ventional PID controllers were used as a point of com- parison was carried out so that it could be shown how valuable the fractional order is in the design that was proposed.
Effectively indexing Data Warehouses: A Constraint Programming Perspective
Author :
Youcef Ariouat; LIM Laboratory, Amar Telidji University of Laghouat, Bp 37G, Ghardaia Road, Laghouat 03000, Algeria
Co-Authors: :
Benamor Ziani and Youcef Ouinten; LIM Laboratory, Amar Telidji University of Laghouat, Bp 37G, Ghardaia Road, Laghouat 03000, Algeria
Keywords:
Data warehouses; bitmap join index; constraint programming; index selection problem; constraint optimization problem; decisional systems.
e-Mail:
y.ariouat@cu-barika.dz
Abstract::
Data warehouses have become, nowadays, at the core of decisional systems. The Index Selection Problem (ISP) is a challenging problem in data warehouses physical design. Regarding the NP-hard nature of this problem, existing solutions rely heavily on heuristics which constitutes a major drawback. In this paper, we propose a novel exact approach to the ISP based on Constraint Programming (CP). We formulate the problem as a Constraint Optimization Problem in a declarative way, then its resolution is automatically supported by a generic CP solver. Our proposed approach has also the advantage of being declarative, flexible, and expandable as it allows incorporating various kinds of user preferences, expressed as constraints, as well as choosing or defining new search strategies. Experimental results confirm our expectations and show that our approach scales well enough to solve much larger realistic instances in a faster and more effective way compared to well-known state-of-the-art approximation approaches.
Smart Control of the Bidirectional Energy Exchange of Electric Vehicles With the Electrical Network
Author :
Youcef BOT; Laboratory LAGC, Department of Technology, University DB of Khemis Miliana, Algeria
Co-Authors: :
Abdelkader YOUSFI; Laboratory LAGC, Department of Technology, University DB of Khemis Miliana, Algeria. Ahmed ALLALI;Laboratory LDDEE, Faculty of Electrical Engineering, USTO-MB., Oran, Algeria
Keywords:
Electric vehicles; Distribution networks; Smart Grids; Vehicle-to-Grid; Smart control.
e-Mail:
bot_youcef@yahoo.fr
Abstract::
The democratization of plug-in hybrid vehicles as well as purely electric vehicles implies a surplus of demand on the distribution networks. Vehicle-to-Grid aims to meet this increased demand by using vehicles no longer as simple loads for the electricity network but as players carrying out two-way energy exchanges. The work presented in this article proposes a real-time “Grid-to-Vehicle/Vehicle-to-Grid” control algorithm for an electrical distribution system. The results show that the system makes it possible to achieve energy gains shared between the actors while efficiently recharging the participating vehicles.